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PDF KMBT5551 Data sheet ( Hoja de datos )
| Número de pieza | KMBT5551 | |
| Descripción | NPN Transistors | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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SMD Type
NPN Transistors
KMBT5551(MMBT5551)
Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, Tstg
Rating
180
160
6
0.6
300
-55 to +150
Unit
V
V
V
A
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
www.DataCSohlleeectto4rU-b.caosembreakdown voltage
Symbol
Testconditons
VCBO IC = 100 ìA, IE = 0
Collector-emitter breakdown voltage *
VCEO IC = 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO IE = 10 ìA, IC = 0
Collector cutoff current
ICBO VCB = 120 V, IE = 0
Emitter cutoff current
IEBO VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 5 V
DC current gain *
hFE IC = 10 mA, VCE = 5 V
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage *
VCE(sat) IC = 50 mA, IB = 5.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = 50 mA, IB = 5.0 mA
Transiston frequency
fT VCE=10V,IC=10mA,f=100MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
Marking
Marking
G1
Min Typ Max Unit
180 V
160 V
6V
50 nA
50 nA
80
100 300
50
0.5 V
1.0 V
100 MHz
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