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PDF RJK6026DPP Data sheet ( Hoja de datos )
| Número de pieza | RJK6026DPP | |
| Descripción | Silicon N Channel MOSFET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK6026DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
www.DaGtaaStheeteot4sUo.ucorcme voltage
Drain current
Drain peak current
VDSS
VGSS
ID Note4
ID (pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
REJ03G1592-0200
Rev.2.00
Jun 04, 2008
D
1. Gate
2. Drain
3. Source
S
Ratings
600
±30
5
20
5
20
4
0.87
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Page 1 of 6
1 page  
RJK6026DPP
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
3
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03 0.011shot pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.38°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
www.DataSheet4U.com
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1592-0200 Rev.2.00 Jun 04, 2008
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6026DPP.PDF ] | |
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