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PDF IRHNB7460SE Data sheet ( Hoja de datos )

Número de pieza IRHNB7460SE
Descripción RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricantes International Rectifier 
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PD - 91741A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7460SE
500V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7460SE 100K Rads (Si) 0.32
ID
20A
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
20
12 A
80
300 W
2.4 W/°C
±20 V
500 mJ
20 A
30 mJ
3.8
-55 to 150
V/ns
oC
300 (for 5 sec.)
3.5(Typical)
g
1
6/4/01

1 page




IRHNB7460SE pdf
Pre-Irradiation
IRHNB7460SE
8000
6000
4000
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 2108A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
www.DataSheet4TJU=.c1o5m0° C
10
1 TJ = 25° C
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8 2.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC
TJ
=
=
25 ° C
150° C
Single Pulse
1
10 100
10ms
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
5

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