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PDF IRHNB7360SE Data sheet ( Hoja de datos )
| Número de pieza | IRHNB7360SE | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD - 91740B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7360SE
400V, N-CHANNEL
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNB7360SE 100K Rads (Si) 0.20Ω
ID
24A
International Rectifiers RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
Absolute Maximum Ratings
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Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
24
15 A
96
300 W
2.4 W/°C
±20 V
500 mJ
24 A
30 mJ
3.0
-55 to 150
V/ns
oC
300 (for 5 sec.)
3.5 (Typical)
g
1
6/4/01
1 page  
Pre-Irradiation
IRHNB7360SE
8000
6000
4000
2000
VCGissS
=
=
0V,
Cgs
+
f=
Cgd
1MHz
, Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 234A
16
VDS = 320V
VDS = 200V
VDS = 80V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200 240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
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TJ = 150° C
10
1
0.1
0.2
TJ = 25° C
VGS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10 100us
TC
TJ
=
=
25 ° C
150° C
Single Pulse
1
10
100
1ms
10umss
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNB7360SE.PDF ] | |
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