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PDF FGAF40N60UF Data sheet ( Hoja de datos )

Número de pieza FGAF40N60UF
Descripción Ultrafast IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FGAF40N60UF Hoja de datos, Descripción, Manual

November 2013
FGAF40N60UF
600 V PT IGBT
General Description
Fairchild's UF series of IGBTs provide low conduction and
switching losses. The UF series is designed for applications
such as general inverters and PFC where high speed
switching is a required feature.
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A
• High Input Impedance
Applications
General Inverter, PFC
C
TO-3PF
GCE
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
20
40
20
160
100
40
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
1.2
40
Unit
V
V
A
A
A
W
W
C
C
C
Unit
C/W
C/W
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com

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FGAF40N60UF pdf
3000
1000
Eon
100 Eoff
Eoff
10
10
Common Emitter
V = 300V, V = ± 15V
CC GE
RG = 10
TC = 25
TC = 125
15 20 25 30 35 40
Collector Current , Ic (A)
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL=15
12 (Tc=25 )
9
6
300V
200V
Vcc=100V
3
0
0 30 60 90 120
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
50s
100s
1ms
DC Operation
1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
1 10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
500
100
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
1E-5
1E-4
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
1
10
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. C1
www.fairchildsemi.com

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