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PDF LE25FU206 Data sheet ( Hoja de datos )
| Número de pieza | LE25FU206 | |
| Descripción | 2M-bit Serial Flash Memory | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN*A1191
LE25FU206
CMOS IC
2M-bit (256K×8) Serial Flash Memory
Overview
The LE25FU206 is a serial interface-compatible flash memory device with a 256K × 8-bit configuration. It uses a single
2.5V power supply for both reading and writing (program and erase functions) and does not require a special power
supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size
of the memory area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector
(64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be
efficiently utilized by selecting one of these functions depending on the application. A page program method is supported
for data writing. The page program method of the LE25FU206 can program any amount of data from 1 to 256 bytes. The
program time of 2.0ms (typ.) when programming 256 bytes (1 page) at one time makes for fast data writing. While
making the most of the features inherent to a serial flash memory device, the LE25FU206 is housed in an 8-pin ultra-
miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the
LE25FU206 has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up to
30MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in
applications such as portable information devices and small disk systems, which are required to have increasingly more
compact dimensions.
Features
• Read/write operations enabled by single 2.5V power supply: 2.30 to 3.60V supply voltage range
• Operating frequency : 30MHz
• Temperature range : 0 to 70°C
-40 to +85°C (at the planning stage)
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Continued on next page.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
60408 SY IM No.A1191-1/21
1 page  
LE25FU206
Device Operation
The LE25FU206 features electrical on-chip erase functions using a single 2.5V power supply, that have been added to
the EPROM functions of the industry standard that support serial interfaces. Interfacing and control are facilitated by
incorporating the command registers inside the chip. The read, erase, program and other required functions of the
device are executed through the command registers. The command addresses and data input in accordance with "Table
2 Command Settings" are latched inside the device in order to execute the required operations. "Figure 3 Serial Input
Timing" shows the timing waveforms of the serial data input. First, at the falling CS edge the device is selected, and
serial input is enabled for the commands, addresses, etc. These inputs are introduced internally in sequence starting with
bit 7 in synchronization with the rising SCK edge. At this time, output pin SO is in the high-impedance state. The
output pin is placed in the low-impedance state when the data is output in sequence starting with bit 7 synchronized to
the falling clock edge during read, status register read and silicon ID. Refer to "Figure 4 Serial Output Timing" for the
serial output timing.
The LE25FU206 supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of
SCK is high.
Figure 3 Serial Input Timing
CS
SCK
SI
tCLS
tCSS
tDS tDH
DATA VALID
tCPH
tCLHI tCLLO tCSH
tCLH
High Impedance
SO
High Impedance
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Figure 4 Serial Output Timing
CS
SCK
SO
SI
tCLZ
tHO
DATA VALID
tV
tCHZ
No.A1191-5/21
5 Page 
LE25FU206
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes. "Figure 12 Small Sector Erase" shows the timing waveforms, and Figure 21 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by
inputting the 24-bit addresses following (D7h). Addresses A17 to A12 are valid, and Addresses A23 to A18 are "don't
care". After the command has been input, the internal erase operation starts from the rising CS edge, and it ends
automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Small Sector Erase
CS
Self-timed
Erase Cycle
tSSE
SCK
SI
Mode3 0 1 2 3 4 5 6 7 8
Mode0
15 16 23 24 31
8CLK
D7h
Add. Add. Add.
High Impedance
SO
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes. "Figure
13 Sector Erase" shows the timing waveforms, and Figure 21 shows a sector erase flowchart. The sector erase command
consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (D8h).
Addresses A17 to A16 are valid, and Addresses A23 to A18 are "don't care". After the command has been input, the
internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal
timer. Erase end can also be detected using status register RDY.
Figure 13 Sector Erase
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CS
Self-timed
Erase Cycle
tSE
SCK
SI
Mode3
Mode0
012345678
15 16 23 24 31
8CLK
D8h Add. Add. Add.
High Impedance
SO
No.A1191-11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet LE25FU206.PDF ] | |
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