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PDF T1P3002028-SP Data sheet ( Hoja de datos )
| Número de pieza | T1P3002028-SP | |
| Descripción | PowerbandTM pHEMT RF Power Transistor | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Introduction
The T1P3002028-SP is a POWERBANDTM discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 20watts across
the entire band when operated in the TriQuint wide-band test
fixture. The T1P3002028-SP can also be used in narrow band ap-
plications and is rated at 26Watts P1dB at 2GHz.
Figure 1. Available Packages
— Narrow Band up to 2GHz
— 12dB gain
— 58% efficiency
— 26Watt P1dB
Table 1. Maximum Ratings
Sym Parameter
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
l+ Positive Supply Current
| lG |
PD
TCH
Gate Supply Current
Power Dissipation
Operating Channel Temperature
Value
28 V
–5V to 0V
5.6A
70 mA
See note 3
150o C
Notes
2/
2/
2/ 3/
4/
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Features
— Pulse Characterization
— Exceptional Instantaneous band-width performance from
500MHz – 2GHz
— Increased efficiency results in significant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Efficiency
— 20Watt P1dB
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life time of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junction operating temperature will directly affect the device
median time to failure(TM). For maximum life, it is recom-
mended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Test Conditions TCH θJC TM
(°C) (°C/W) (HRS)
θJC Thermal Resis- Vd = 10 V
tance (channel to Idq = 900 mA
backside of carrier) Pdiss = 9 W
145 8.3 1.6E+6
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
1 page  
T1P3002028-SP
20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
Figure 4. Plot of impedances to be presented to the Source & Load of the device for optimal RF performance
j5
j2.5
500 MHz
j10
2500 MHz
j1 j25
500 MHz
0
1 2.5
5 10 25
∞
−j1
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2500 MHz
Zs − Optimal Input Impedance for Gain
ZL − Optimal load match for P1dB
ZL − Optimal load match for PAE
ZL − Compromise for P1dB and PAE
−j2.5
−j10
−j5
−j25
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
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