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PDF KST8050S Data sheet ( Hoja de datos )
| Número de pieza | KST8050S | |
| Descripción | NPN Transistors | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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SMD Type
Transistors
Features
Collector Current: IC=0.5A
NPN Transistors
KST8050S
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
IC
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Rating
40
25
5
0.5
0.3
150
-55 to 150
Unit
V
V
V
A
W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
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Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Testconditons
VCBO IC = 100 ìA , IE = 0
VCEO IC = 1mA , IB = 0
VEBO IE = 100 ìA , IC = 0
ICBO VCB = 40 V , IE = 0
ICEO VCE = 20 V , IB = 0
IEBO VEB = 5 V , IC = 0
VCE = 1 V , IC = 50 mA
hFE
VCE = 1 V , IC = 500 mA
VCE(sat) IC = 500 mA , IB = 50 mA
VBE(sat) IC = 500 mA , IB = 50 mA
fT VCE = 6 V , IC = 20 mA , f = 30 MHz
Min Typ Max Unit
40 V
25 V
5V
0.1 A
0.1 A
0.1 A
120 350
50
0.6 V
1.2 V
150 MHz
hFE Classification
Marking
J3Y
Rank
hFE
L
120 200
H
200 350
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