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PDF SCR6C60 Data sheet ( Hoja de datos )

Número de pieza SCR6C60
Descripción Silicon Controlled Rectifiers
Fabricantes SemiWell Semiconductor 
Logotipo SemiWell Semiconductor Logotipo



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No Preview Available ! SCR6C60 Hoja de datos, Descripción, Manual

SemiWell Semiconductor
SCR6C60
Silicon Controlled Rectifiers
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
General Description
2. Anode
3. Gate
1. Cathode
TO-126
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
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ITSM
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t I2t for Fusing
Half Sine Wave : TC = 106 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
3
2
1
Ratings
600
3.8
6
66
21
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
Dec, 2002. Rev. 3
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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SCR6C60 pdf
TO-126 Package Dimension
mm
Dim.
Min. Typ.
A 7.5
B 10.8
C 14.2
D 2.7
E 3.8
F 2.5
G 1.2
H 2.3
I 4.6
J 0.48
K 0.7
L 1.4
φ 3.2
SCR6C60
Max.
7.9
11.2
14.7
2.9
1.5
0.62
0.86
Min.
0.295
0.425
0.559
0.106
0.047
0.019
0.028
Inch
Typ.
0.150
0.098
0.091
0.181
0.055
0.126
Max.
0.311
0.441
0.579
0.114
0.059
0.024
0.034
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B
F
C
A
E
φ
3
2
1
D
G
JK
H
L
1. Gate
2. Anode
3. Cathode
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