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PDF RJK2511DPK Data sheet ( Hoja de datos )
| Número de pieza | RJK2511DPK | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK2511DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1
2
3
G
S
REJ03G1486-0400
Rev.4.00
Nov 27, 2007
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
www.DaDtarSahineetot4sUo.cuormce voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
65
200
65
200
22
30.2
200
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 1 of 6
1 page  
RJK2511DPK
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4
ID = 10 mA
1 mA
3
40 10 V
20 5 V
VGS = 0 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
2
0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
www.DataSheet4U.com
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 0.625°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Waveform
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125V
Vin
Vout
10%
10%
90%
90%
90%
10%
td(on)
tr td(off)
tf
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 5 of 6
5 Page | ||
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| PDF Descargar | [ Datasheet RJK2511DPK.PDF ] | |
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