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Número de pieza | FLK027WG | |
Descripción | Ku Band Power GaAs FET | |
Fabricantes | Eudyna Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FLK027WG (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! FLK027WG
X, Ku Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 24.0dBm(Typ.)
• High Gain: G1dB = 7.0dB(Typ.)
• High PAE: ηadd = 32%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK027WG is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
1.875
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
www.DataSheet4U.com
Saturated Drain Current
Transconductance
Symbol
Test Conditions
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 65mA
Min.
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 5mA
-1.0
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
VGSO
P1dB
G1dB
ηadd
IGS = -5µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
-5
23.0
6.0
-
Limit
Typ. Max.
100 150
50 -
-2.0 -3.5
--
24.0 -
7.0 -
32 -
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE: WG
P1dB
G1dB
ηadd
Rth
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 12 GHz
Channel to Case
- 24 -
dBm
- 8-
dB
- 34 -
%
- 40 80
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FLK027WG.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLK027WG | Ku Band Power GaAs FET | Eudyna Devices |
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