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PDF FLK017XP Data sheet ( Hoja de datos )
| Número de pieza | FLK017XP | |
| Descripción | GaAs FET & HEMT Chips | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FLK017XP (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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FEATURES
• High Output Power: P1dB = 20.5dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 26%(Typ.)
• Proven Reliability
FLK017XP
GaAs FET & HEMT Chips
Drain
DESCRIPTION
The FLK017XP chip is a power GaAs FET that is designed for
general purpose applications in the Ku-Band frequency range as it
provides superior power, gain, and efficiency.
Source
Source
Gate
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with
gate resistance of 3000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
1.15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
www.DatSaSahtueerta4tUe.cdomDrain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Noise Figure
Associated Gain
IDSS
gm
Vp
VGSO
P1dB
G1dB
ηadd
NF
Gas
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 40mA
VDS = 5V, IDS = 3mA
IGS = -3µA
VDS = 10V
IDS ≈ 0.6 IDSS
f = 14.5GHz
VDS = 3V
IDS = 20mA
f = 12GHz
Maximum Availble Gain
VDS = 10V
Ga(max) IDS = 36mA
f = 12GHz
Min.
-
-
-1.0
-5
19.5
7.0
-
-
-
-
Limit
Typ. Max.
60 90
30 -
-2.0 -3.5
--
20.5 -
8.0 -
26 -
2.5 -
7-
11 -
Unit
mA
mS
V
V
dBm
dB
%
dB
dB
dB
Thermal Resistance
Rth Channel to Case
- 65 130
°C/W
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.3
July 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLK017XP.PDF ] | |
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