|
|
PDF EIB1213-4P Data sheet ( Hoja de datos )
| Número de pieza | EIB1213-4P | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EIB1213-4P (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
UPDATED 06/14/06
EIB1213-4P
12.75-13.25GHz 4W Internally Matched Power FET
FEATURES
• 12.75-13.25 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.0 dBm Output Power at 1dB Compression
• 8.5 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• -46 dBc IM3 at PO = 25.0 dBm SCL
• Non-Hermetic Metal Flange Package
EIB1213-4P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 12.75-13.25GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 12.75-13.25GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain Flatness
f = 12.75-13.25GHz
VDS = 8 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 1600mA
f = 12.75-13.25GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 12.75-13.25GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2
VDS = 8 V, IDSQ ≈ 65% IDSS
f = 13.25GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
www.DataSheeRt4TUH.com Thermal Resistance3
VDS = 3 V, IDS = 24 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
35.0
7.50
TYP
36.0
8.50
25
1700
MAX
±0.6
1900
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
2720
3400
mA
-2.0 -3.5
V
4.5 5.0 oC/W
3) Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current 43.2mA
Igsr
Reverse Gate Current
-7.2mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
35.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
30W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised June 2006
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet EIB1213-4P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EIB1213-4P | Internally Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |