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PDF 03P6MG Data sheet ( Hoja de datos )
| Número de pieza | 03P6MG | |
| Descripción | (03P4MG / 03P6MG) 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR | |
| Fabricantes | NEC | |
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DATA SHEET
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50 µA)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
PACKAGE DRAWING (Unit: mm)
φ 5.2 MAX.
Electrode connection
1: Gate
2: Anode
3: Cathode
0.5
1.27
*TC test bench-mark
Standard weight: 0.3 g
2.54
123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
03P4MG
03P6MG
Non-repetitive Peak Reverse Voltage
VRSM
700
700
Non-repetitive Peak Off-state Voltage
www.DataSheReet4pUet.ictiovme Peak Reverse Voltage
VDSM
VRRM
700
400
700
600
Repetitive Peak Off-state Voltage
VDRM
400
600
Average On-state Current
IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°)
Effective On-state Current
5 Surge On-state Current
Fusing Current
IT(RMS)
ITSM
∫ iT2dt
470
8 (f = 50 Hz, Sine half-wave, 1 cycle)
0.15 (1 ms ≤ t ≤ 10 ms)
Critical Rate of On-state Current of Rise dIT/dt
20
Peak Gate Power Dissipation
PGM 100 (f ≥ 50 Hz, Duty ≤ 10%)
Average Gate Power Dissipation
PG(AV)
10
Peak Gate Forward Current
IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%)
Peak Gate Reverse Voltage
VRGM
6
Junction Temperature
Tj −40 to +125
Storage Temperature
Tstg −55 to +150
Unit Remarks
V RGK = 1 kΩ
V RGK = 1 kΩ
V RGK = 1 kΩ
V RGK = 1 kΩ
mA Refer to Figure 10.
mA −
A Refer to Figure 2.
A2s −
A/µs
−
mW Refer to Figure 3.
mW Refer to Figure 3.
mA −
V−
°C −
°C −
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002
1 page  
1000
Figure 14. Zth Characteristics
100
10
1
0.001
0.01
0.1 1 10
Time t (s)
03P4MG,03P6MG
Connection to
ambient
100 1000
www.DataSheet4U.com
Data Sheet D15290EJ4V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 03P6MG.PDF ] | |
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