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PDF WFD2N60 Data sheet ( Hoja de datos )
| Número de pieza | WFD2N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Wisdom technologies | |
| Logotipo |  |
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Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge (Typical 9.5nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
D-PAK, I-PAK
2
1
3
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
www.DataSheet4U.comEAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
1.8
1.1
6.0
±30
120
4.4
4.5
44
0.35
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
2.87
50
110
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 page  
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
3mA
DUT
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
www.DataSheet4U.com
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
DUT
EAS=--21--LIAS2
------B--V--D--S-S-------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
VDD
VDS(t)
tp Time
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WFD2N60.PDF ] | |
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