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PDF IXZ318N50 Data sheet ( Hoja de datos )
| Número de pieza | IXZ318N50 | |
| Descripción | 500V (max) Switch Mode MOSFETS | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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IXZ318N50
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
VDSS
ID25
= 500 V
= 19.0 A
Symbol Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Rat-
ings
500 V
500 V
RDS(on) = 0.325 Ω
PDC = 880 W
VGS
Continuous
±20 V
VGSM
Transient
±30 V
ID25 Tc = 25°C
19 A
IDM Tc = 25°C, pulse width limited by TJM
95 A
IAR Tc = 25°C
19 A
EAR
Tc = 25°C
TBD mJ
dv/dt
PDC
PDHS
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C, Derate 4.4W/°C above 25°C
5 V/ns
>200 V/ns
880 W
440 W
GATE
DRAIN
PDAMB
Tc = 25°C
3.0 W
RthJC
RthJHS
0.17 C/W
0.34 C/W
Symbol Test Conditions
www.DataSheet4U.com
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
500
3.5
6.5
±100
50
1
V
V
nA
µA
mA
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.325
Ω
gfs VDS = 50 V, ID = 0.5ID25, pulse test
14 S
TJ
-55
+175
°C
TJM 175 °C
Tstg
-55
+ 175
°C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
TL 1.6mm(0.063 in) from case for 10 s
300 °C
Weight
3.5 g
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IXZ318N50.PDF ] | |
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