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Número de pieza | IXZ308N120 | |
Descripción | Z-MOS RF Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXZ308N120 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode LSiwneitcahr 1M7o5dMeHRzFRMFOMSOFSEFTET
LowCCapaapcaictaitnacneceZ-ZM-MOOSTSMTMMMOOSFSEFTETPrPorcoecsesss
Optimized for RLiFneOapr eOrapteiorantion
Ideal for Class ACB, D&, C&,EBAropapdliccaastito&nsCommunications Applications
VDSS
ID25
= 1200 V
= 8.0 A
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
RthJC
RthJHS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
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VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
min.
1200
3.5
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 50 V, ID = 0.5ID25, pulse test
-55
1.6mm(0.063 in) from case for 10 s
-55
Maximum Rat-
ings
1200
1200
V
V
±20 V
±30 V
8A
40 A
8A
TBD mJ
5 V/ns
RDS(on)
PDC
=
=
2.1 Ω
880 W
>200 V/ns
880 W
440 W
GATE
DRAIN
3.0 W
0.17 C/W
0.34 C/W
typ. max.
6.5
±100
50
1
2.1
10.1
175
+175
+ 175
V
V
nA
µA
mA
Ω
S
°C
°C
°C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
300 °C
3.5 g
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet IXZ308N120.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXZ308N120 | Z-MOS RF Power MOSFET | IXYS Corporation |
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