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PDF IXZ12210N50L Data sheet ( Hoja de datos )
| Número de pieza | IXZ12210N50L | |
| Descripción | RF Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ1210N50L single ended device unless otherwise
Symbol Test Conditions
Maximum Ratings
VDSS
ID25
= 500 V
= 10 A
125V (operating)
175MHz
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by
TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤
VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
500
500
±20
±30
10
60
16
TBD
5
>200
V
V
V
V
A
A
A
mJ
V/ns
V/ns
Per Device
Total
PDC
PDHS
Tc = 25°C, Derate 6.0W/°C above
25°C
PDAMB
Tc = 25°C
RthJC
www.DRattahSJHhSeet4U.com
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
180
150
0.83
1.00
min.
500
3.5
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 50 V, ID = 0.5ID25, pulse test
-55
1.6mm(0.063 in) from case for 10 s
-55
360 W
300 W
10
0.42
0.50
typ.
4.83
1.0
3.8
300
4
W
C/W
C/W
max.
6.5
±100
50
1
V
V
nA
µA
mA
Ω
+175
+175
+ 175
S
°C
°C
°C
°C
g
Features
• IXYS RF Low Capacitance Z-MOSTM
Process
• Very low insertion inductance (<2nH)
Advantages
• High Performance RF Package
• Easy to mount—no insulators needed
• Standard RF Package
(1) Thermal specifications are for the pack-
age, not per transistor
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXZ12210N50L.PDF ] | |
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