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PDF FSEZ1016A Datasheet ( Hoja de datos )

Número de pieza FSEZ1016A
Descripción Primary-Side-Regulation PWM Integrated Power MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo

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FSEZ1016A Hoja de datos, Descripción, Manual
June 2009
FSEZ1016A (EZSWITCH™, ™)
Primary-Side-Regulation PWM Integrated Power MOSFET
Features
ƒ Constant-Voltage (CV) and Constant-Current (CC)
Control without Secondary-Feedback Circuitry
ƒ Accurate Constant Current Achieved by Fairchild’s
Proprietary TRUECURRENT™ Technique
ƒ Green Mode: Frequency Reduction at Light-Load
ƒ Fixed PWM Frequency at 43kHz with Frequency
Hopping to Reduce EMI
ƒ Low Startup Current: 10μA Maximum
ƒ Low Operating Current: 3.5mA
ƒ Peak-Current-Mode Control in CV Mode
ƒ Cycle-by-Cycle Current Limiting
ƒ Over-Temperature Protection (OTP)
with Auto-Restart
ƒ Brownout Protection with Auto-Restart
ƒ VDD Over-Voltage Protection (OVP) with
Auto-Restart
ƒ VDD Under-Voltage Lockout (UVLO)
ƒ SOIC-7 Package
www.DataShAeept4pUl.iccomations
ƒ Battery Chargers for Cellular Phones, Cordless
Phones, PDAs, Digital Cameras, Power Tools
ƒ Replaces Linear Transformer and RCC SMPS
ƒ Offline High Brightness (HB) LED Drivers
Related Resources
ƒ AN-6067 Design Guide for FAN100/102 and
FSEZ1016A/1216
Description
The primary-side PWM integrated power MOSFET
(EZSWITCH™), FSEZ1016A, significantly simplifies
power supply designs that require CV and CC regulation
capabilities. FSEZ1016A controls the output voltage and
current precisely with only the information in the primary
side of the power supply, not only removing the output
current sensing loss, but also eliminating all secondary
feedback circuitry.
The green-mode function with a low startup current
(10µA) maximizes the light-load efficiency so the power
supply can meet stringent standby power regulations.
Compared with conventional secondary-side regulation
approach; the FSEZ1016A can reduce total cost,
component count, size, and weight; while
simultaneously increasing efficiency, productivity, and
system reliability.
FSEZ1016A is available in a 7-pin SOIC package.
A typical output CV/CC characteristic envelope is shown
in Figure 1.
Figure 1. Typical Output V-I Characteristic
Ordering Information
Part Number
FSEZ1016AMY
Operating
Temperature
Range
-40°C to +125°C
MOSFET
BVDSS
MOSFET
RDS(ON)
600V
9.3Ω
(Typical)
Eco
Status
Green
Package
7-Lead, Small Outline
Integrated Circuit
Package (SOIC)
Packing
Method
Tape & Reel
For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2009 Fairchild Semiconductor Corporation
FSEZ1016A Rev. 1.0.1
www.fairchildsemi.com

1 page

FSEZ1016A pdf
Electrical Characteristics
VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified.
Symbol
Parameter
VDD Section
VOP
VDD-ON
VDD-OFF
IDD-ST
Continuously-Operating Voltage
Turn-On Threshold Voltage
Turn-Off Threshold Voltage
Startup Current
IDD-OP
Operating Current
IDD-GREEN Green Mode Operating Supply Current
VDD-OVP VDD OVP Level
tD-VDDOVP VDD OVP Debounce Time
Oscillator Section
Center Frequency
fOSC
Frequency
Frequency Hopping Range
fFHR Frequency Hopping Period
fOSC-N-MIN Minimum Frequency at No-Load
fOSC-CM-MIN Minimum Frequency at CCM
fDV Frequency Variation vs. VDD Deviation
fDT
Frequency Variation vs. Temperature
Deviation
Voltage-Sense Section
IVS-UVP Sink Current for Brownout Protection
www.DataSheet4UI.tccom IC Compensation Bias Current
VBIAS-COMV Adaptive Bias Voltage Dominated by VCOMV
Current-Sense Section
tPD Propagation Delay to Gate Output
tMIN-N
Minimum On Time at No-Load
tMINCC
Minimum On Time in CC Mode
VTH Threshold Voltage for Current Limit
Current-Error-Amplifier Section
VIR Reference Voltage
II-SINK
Output Sink Current
II-SOURCE Output Source Current
VI-HGH
Output High Voltage
Conditions
0<VDD<VDD-ON-0.16V
VDD=20V, fS= fOSC
VVS=2V, VCS=3V
CL=1nF
VDD=20V, VVS=2.7V
CL=1nF, VCOMV=0V
fS=fOSC-N-MIN, VCS=0V
VCS=3V, VVS=2.3V
fS=fOSC, VVS=2.3V
TA=25°C
TA=25°C
TA=25°C
VVS=2.7V, VCOMV=0V
VVS=2.3V, VCS=0.5V
TA=25°C, VDD=10V to
25V
TA=-40°C to +125°C
RVS=20k
VCOMV=0V, TA=25°C,
RVS=20K
VVS= -0.8V, RCS=2k
VCOMV=1V
VVS=0V, VCOMV=2V
VCS=3V, VCOMI=2.5V
VCS=0V, VCOMI=2.5V
VCS=0V
Min. Typ. Max. Units
25 V
15 16 17
V
4.5 5.0 5.5
V
3.7 10.0 μA
3.5 5.0 mA
1.0 2.5 mA
27 28 29
100 250 400
V
μs
40 43 46 KHz
±1.8 ±2.6 ±3.6
3 ms
550 Hz
20 KHz
5%
20 %
180 μA
9.5 μA
1.4 V
100
1100
300
1.3
200
ns
ns
ns
V
2.475 2.500 2.525
55
55
4.5
V
μA
μA
V
Continued on the following page…
© 2009 Fairchild Semiconductor Corporation
FSEZ1016A Rev. 1.0.1
5
www.fairchildsemi.com

5 Page

FSEZ1016A arduino
Temperature Compensation
Built-in temperature compensation provides constant
voltage regulation over a wide range of temperature
variation. This internal compensation current
compensates the forward-voltage drop variation of the
secondary-side rectifier diode.
Green-Mode Operation
The FSEZ1016A uses voltage regulation error amplifier
output (VCOMV) as an indicator of the output load and
modulates the PWM frequency, as shown in Figure 26,
such that the switching frequency decreases as load
decreases. In heavy-load conditions, the switching
frequency is fixed at 43KHz. Once VCOMV decreases
below 2.8V, the PWM frequency starts to linearly
decrease from 43KHz to 550Hz to reduce the switching
losses. As VCOMV decreases below 0.8V, the switching
frequency is fixed at 550Hz and FSEZ1016A enters
“deep green” mode, where the operating current drops
to 1mA, reducing the standby power consumption.
Gate Drive Signal
ts
ts
fs
45.6kHz
4430..04kkHHzz
ts
Swi tching Frequen cy
43 kH z
3ms
Figure 27. Frequency Hopping
t
Dee p
G ree n
Mod e
Green Mod e
Normal Mod e
www.DataShe5e5t04HUz.com
0.8V
2.8V
V COMV
Figure 26. Switching Frequency in Green Mode
Leading-Edge Blanking (LEB)
At the instant the MOSFET is turned on, there is a high-
current spike through the MOSFET, caused by primary-
side capacitance and secondary-side rectifier reverse
recovery. Excessive voltage across the RCS resistor can
lead to premature turn-off of the MOSFET. FSEZ1016A
employs an internal leading-edge blanking (LEB) circuit
to inhibit the PWM comparator for a short time after the
MOSFET is turned on. External RC filtering is not required.
Frequency Hopping
EMI reduction is accomplished by frequency hopping,
which spreads the energy over a wider frequency range
than the bandwidth measured by the EMI test
equipment. FSEZ1016A has an internal frequency-
hopping circuit that changes the switching frequency
between 40.4kHz and 45.6kHz with a period of 3ms, as
shown in Figure 27.
Startup
Figure 28 shows the typical startup circuit and
transformer auxiliary winding for a FSEZ1016A
application. Before FSEZ1016A begins switching, it
consumes only startup current (typically 10μA) and the
current supplied through the startup resistor charges the
VDD capacitor (CDD). When VDD reaches turn-on voltage
of 16V (VDD-ON), FSEZ1016A begins switching, and the
current consumed increases to 3.5mA. Then, the power
required for FSEZ1016A is supplied from the
transformer auxiliary winding. The large hysteresis of
VDD provides more hold-up time, which allows using a
small capacitor for VDD.
VDL
+
CDL -
AC line
FSEZ1016A
1 CS
2 GND
DRAIN 8
3 COMI
4 COMV
VDD 6
VS 5
RSTART
DDD
CDD
Np
NA
RS1
RS2
Figure 28. Startup Circuit
© 2009 Fairchild Semiconductor Corporation
FSEZ1016A Rev. 1.0.1
11
www.fairchildsemi.com

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