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PDF FGA70N30TD Data sheet ( Hoja de datos )
| Número de pieza | FGA70N30TD | |
| Descripción | 70A PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGA70N30TD
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
December 2007
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
G
E
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC pulse(1)*
Pulsed Collector Current
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IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
Maximum Power Dissipation
PD Maximum Power Dissipation
@ TC = 25oC
@ TC = 100°C
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode
RθJA
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
Ratings
300
±30
160
10
40
201
90.6
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.62
1.56
40
©2006 Fairchild Semiconductor Corporation
FGA70N30TD Rev. A
1
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
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1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
T = 125oC
C
16
12
8
40A
4
70A
IC = 20A
0
48
12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate Charge Characteristics
15
Common Emitter
TC = 25oC
12
100V
Vcc = 200V
9
6
3
0
0
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30 60 90 120
Gate Charge, Qg [nC]
150
Figure 11. Turn-on Characteristics vs.
Gate Resistance
300
Figure 8. Capacitance Characteristics
6000
5000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4000
Ciss
3000
2000
1000
0
1
Coss
Crss
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
IC MAX (Pulsed)
100
50µs
100µs
10
IC MAX (Continuous)
1
1ms
10ms
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
DC Operation
linearly with increase
in temperature
0.01
0.1 1 10 100
Collector - Emitter Voltage, VCE [V]
500
Figure 12. Turn-off Characteristics vs.
Gate Resistance
3000
100
tr
10
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
1000
tf
100
td(off)
10
0
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
20 40 60 80 100
Gate Resistance, RG [Ω]
FGA70N30TD Rev. A
5
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA70N30TD.PDF ] | |
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