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Número de pieza | FDS8882 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDS8882 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features
General Description
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
Notebook System Regulators
DC/DC Converters
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
9
21
32
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8882
Device
FDS8882
Package
SO8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDS8882.PDF ] |
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