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PDF FDP8443 Data sheet ( Hoja de datos )
| Número de pieza | FDP8443 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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August 2007
FDP8443
N-Channel PowerTrench® MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 142nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
tm
www.DataSheet4U.com
©2007 Fairchild Semiconductor Corporation
FDP8443 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Characteristics
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40 TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
www.DataSheet4U.com Figure 7. Transfer Characteristics
5.0
200
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
160
VGS = 5V
120 VGS = 4.5V
80
40
VGS = 4V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
80
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60
TJ = 25oC
40 TJ = 175oC
20
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP8443 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDP8443.PDF ] | |
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