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PDF K3435 Data sheet ( Hoja de datos )
| Número de pieza | K3435 | |
| Descripción | MOSFET ( Transistor ) - 2SK3435 | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
5 • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3435
2SK3435-S
TO-220AB
TO-262
2SK3435-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
60
±20
±80
±320
84
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
5 Single Avalanche Current Note2
www.DataSheet4U.com
5 Single Avalanche Energy Note2
Tstg –55 to +150
IAS 31
EAS 96
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14604EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3435.PDF ] | |
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