|
|
Número de pieza | FDMS7650 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMS7650 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! February 2016
FDMS7650
N-Channel PowerTrench® MOSFET
30 V, 267 A, 0.99 mΩ
Features
General Description
Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge and extremely low rDS(on).
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
Applications
OringFET
Synchronous Rectifier
D
D
D
D
D5
4G
G
S
S
S
Pin 1
Top Bottom
Power 56
D6
D7
D8
3S
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 5)
(Note 5)
(Note 1a)
(Note 6)
(Note 3)
(Note 1a)
Ratings
30
±20
267
169
36
1210
544
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS7650
Device
FDMS7650
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted.
2
1
0.1
0.01
0.001
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 1.2 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2012 Fairchild Semiconductor Corporation
FDMS7650 Rev.1.9
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMS7650.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMS7650 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDMS7650DC | N-Channel Dual Cool 56 PowerTrench MOSFET | Fairchild Semiconductor |
FDMS7656AS | N-Channel MOSFET | Fairchild Semiconductor |
FDMS7658AS | N-Channel MOSFET | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |