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PDF FDMC6675BZ Data sheet ( Hoja de datos )
| Número de pieza | FDMC6675BZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
June 2009
Features
General Description
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
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Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-40
-9.5
-32
36
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC6675BZ
Device
FDMC6675BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
VGS = -10 V
100
10
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1
0.3
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1
0.1
0.01
0.001
10-3
www.DataSheet4U.com
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2009 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC6675BZ.PDF ] | |
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