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Número de pieza | FDI040N06 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDI040N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! June 2009
FDI040N06
N-Channel PowerTrench® MOSFET
60V, 168A, 4.0mΩ
tm
Features
• RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
I2-PAK
FDI Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
www.DataVSDhSeSet4U.com Drain to Source Voltage
VGSS
ID
Gate to Source Voltage
Drain Current
-Continuous (TC = 25oC, Silicion Limited)
-Continuous (TC = 100oC, Silicion Limited)
-Continuous (TC = 25oC, Package Limited)
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
Ratings
60
±20
168*
118*
120
672
872
7.0
231
1.54
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDI040N06 Rev. A
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDI040N06 Rev. A
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDI040N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDI040N06 | N-Channel MOSFET | Fairchild Semiconductor |
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