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PDF FDD8426H Data sheet ( Hoja de datos )
| Número de pieza | FDD8426H | |
| Descripción | Dual P and N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDD8426H
September 2009
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A
Q2: P-Channel
Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A
Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A
100% UIL Tested
RoHS Compliant
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
D1/D2
D1 D2
G2
S2
G1
S1
Dual DPAK 4L
G1 G2
S1
N-Channel
S2
P-Channel
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25°C
unless
otherwise
noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current - Continuous (Package Limited)
ID
- Continuous (Silicon Limited)
- Continuous
TC = 25°C
TA = 25°C
- Pulsed
PD
EAS
TJ, TSTG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
TC = 25°C
TA = 25°C
TA = 25°C
(Note 1)
(Note 1a)
(Note 1b)
(Note 3)
Thermal Characteristics
Q1 Q2
40 -40
±20 ±20
17 -17
56 -48
12 -10
40 -40
56 65
3.1
1.3
112 162
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
Package Marking and Ordering Information
(Note 1)
(Note 1)
1.4
1.4
°C/W
Device Marking
FDD8426H
Device
FDD8426H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500units
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 12 A
8
6
4
VDD = 10 V
VDD = 20 V
VDD = 30 V
2
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5000
Ciss
1000
Coss
f = 1 MHz
VGS = 0 V
100
0.1
1
Crss
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
40
20 80
10
TJ = 125 oC
TJ = 25 oC
1
0.01
TJ = 150 oC
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
www.DataSheet4U.com Figure9. UnclampedInductive
Switching Capability
100
60
VGS = 10 V
40
VGS = 4.5 V
20
RθJC = 1.4 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
100 us
10
THIS AREA IS
LIMITED BY rDS(on)
1 SINGLE PULSE
TJ = MAX RATED
RθJC = 1.4 oC/W
TC = 25 oC
0.1
0.1
1
1 ms
10 ms
100 ms
1s
10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
SINGLE PULSE
RθJC = 1.4 oC/W
TC = 25 oC
100
50
10-4
10-3
10-2
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
10-1
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
5
www.fairchildsemi.com
5 Page 
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
tm
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
www.DataSheients4trUuc.ctionms for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
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committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
11 www.fairchildsemi.com
11 Page | ||
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