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PDF FDU6796A Data sheet ( Hoja de datos )

Número de pieza FDU6796A
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDU6796A Hoja de datos, Descripción, Manual

March 2009
FDD6796A / FDU6796A_F071
N-Channel PowerTrench® MOSFET
25 V, 5.7 m
Features
General Description
„ Max rDS(on) = 5.7 mat VGS = 10 V, ID = 20 A
„ Max rDS(on) = 15.0 mat VGS = 4.5 V, ID = 15.2 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
G
G
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
40
67
20
150
40
42
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.6
40
°C/W
Device Marking
FDD6796A
FDU6796A
Device
FDD6796A
FDU6796A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
1
www.fairchildsemi.com

1 page




FDU6796A pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 3.6 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
0.0005
10-4
www.DataSheet4U.com
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-3
PDM
SINGLE PULSE
RθJA = 96 oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1
1000
©2009 Fairchild Semiconductor Corporation
FDD6796A / FDU6796A_F071 Rev.C1
5
www.fairchildsemi.com

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