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PDF FDB031N08 Data sheet ( Hoja de datos )

Número de pieza FDB031N08
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDB031N08 Hoja de datos, Descripción, Manual

July 2008
FDB031N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.1m
tm
Features
• RDS(on) = 2.4m( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
D
D2-PAK
G S FDB Series
G
S
www.DatMaSOheSet4FUE.cTomMaximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
FDB031N08
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
-
Continuous (TC = 25oC, Silicon Limited)
Continuous (TC = 100oC, Silicon Limited)
Continuous (TC = 25oC, Package Limited)
75
±20
235*
165*
120
IDM
EAS
dv/dt
PD
Drain Current
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 3)
940
1995
5.5
375
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.4
62.5
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDB031N08 Rev. A3
1
www.fairchildsemi.com

1 page




FDB031N08 pdf
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDB031N08 Rev. A3
5 www.fairchildsemi.com

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