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Número de pieza | FDA032N08 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDA032N08 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! January 2009
FDA032N08
N-Channel PowerTrench® MOSFET
75V, 235A, 3.2mΩ
tm
Features
• RDS(on) = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
G
G DS
TO-3PN
S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25oC
unless
otherwise
noted*
Symbol
Parameter
FDA032N08
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC, Silicon Limited)
-Continuous (TC = 100oC, Silicon Limited)
-Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
75
±20
235*
165*
120
940
1995
5.5
375
2.5
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.4
0.24
40
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. A
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDA032N08 Rev. A
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDA032N08.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDA032N08 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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