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PDF FCP9N60N Data sheet ( Hoja de datos )
| Número de pieza | FCP9N60N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCP9N60N / FCPF9N60NT
N-Channel MOSFET
600V, 9A, 0.385Ω
Features
• RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A
• Ultra low gate charge ( Typ. Qg = 22nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
August 2009
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
www.DataSVheGeStS4U.com
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 3)
FCP9N60N FCPF9N60NT
600
±30
9.0 9.0*
5.7 5.7*
27 27*
135
3
0.83
100
20
83.3 29.8
0.67 0.24
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP9N60N
1.5
0.5
62.5
FCPF9N60NT
4.2
0.5
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP9N60N
2
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 1.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
1
Figure 13. Transient Thermal Response Curve _ FCPF9N60NT
www.DataSheet4U.com
5
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 3.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
10 102 103
Rectangular Pulse Duration [sec]
FCP9N60N / FCPF9N60NT Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCP9N60N.PDF ] | |
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