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PDF FCP13N60N Data sheet ( Hoja de datos )

Número de pieza FCP13N60N
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FCP13N60N Hoja de datos, Descripción, Manual

FCP13N60N / FCPF13N60NT
N-Channel MOSFET
600V, 13A, 0.258Ω
Features
• RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
August 2009
SupreMOSTM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
D
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
Drain to Source Voltage
www.DataVSGheSSet4U.com Gate to Source Voltage
ID Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heak Sink ( Typical)
Thermal Resistance, Junction to Ambient
FCP13N60N FCPF13N60NT
600
±30
13 13*
8.2 8.2*
(Note 1)
39
39
(Note 2)
235
4.3
1.16
100
(Note 3)
20
116 33.8
0.93 0.27
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
FCP13N60N FCPF13N60NT
1.07 3.7
0.5 0.5
62.5 62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. A
1
www.fairchildsemi.com

1 page




FCP13N60N pdf
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP13N60N
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
PDM
PDM
t1
t2
*Notes:
1. ZθJC(t)
t1
=
t12.07oC/W
Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
Figure 13. Transient Thermal Response Curve _ FCPF13N60NT
www.DataSheet4U.com
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 3.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
FCP13N60N / FCPF13N60NT Rev. A
5
www.fairchildsemi.com

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