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Número de pieza | IGW03N120H2 | |
Descripción | IGBT | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IGW03N120H2 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Qualified according to JEDEC2 for target applications
PG-TO220-3-1
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
IGW03N120H2
IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking
G03H1202
G03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
±20
62.5
-40...+150
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08
1 page IGP03N120H2
IGW03N120H2
10A
8A
VGE=15V
12V
6A 10V
8V
6V
4A
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12A
10A
8A Tj=+150°C
6A Tj=+25°C
4A
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
10A
9A
8A
7A VGE=15V
12V
6A 10V
5A
8V
6V
4A
3A
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
3V
I =6A
C
IC=3A
2V
IC=1.5A
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.6 Febr. 08
5 Page PG-TO220-3-1
IGP03N120H2
IGW03N120H2
Power Semiconductors
11
Rev. 2.6 Febr. 08
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IGW03N120H2.PDF ] |
Número de pieza | Descripción | Fabricantes |
IGW03N120H2 | IGBT | Infineon Technologies |
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