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Número de pieza | 2SA1235A | |
Descripción | Silicon Epitaxial Planar Transistor | |
Fabricantes | Galaxy Semi-Conductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1235A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Small collector to emitter saturation voltage
VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA).
Pb
Lead-free
z Excellent lineary DC forward current gain.
z Super mini package for easy mounting.
2SA1235A
APPLICATIONS
z PNP epitaxial type transistor designed for low frequency.
z Voltage amplify application.
ORDERING INFORMATION
Type No.
Marking
2SA1235A
ME/MF/MG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
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VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-6
IC Collector Current -Continuous
-200
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55~125
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTC094
Rev.A
www.galaxycn.com
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SA1235A.PDF ] |
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