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PDF WV3DG72256V-AD2 Data sheet ( Hoja de datos )

Número de pieza WV3DG72256V-AD2
Descripción 2GB - 2x128Mx72 SDRAM
Fabricantes White Electronic Designs 
Logotipo White Electronic Designs Logotipo



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White Electronic Designs
WV3DG72256V-AD2
PRELIMINARY
2GB – 2x128Mx72 SDRAM, REGISTERED
FEATURES
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the
positive edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full
Page
3.3V ± 0.3V Power Supply
Dual Rank
168 Pin DIMM JEDEC
• PCB - AD2: 28.58mm (1.125”) TYP
DESCRIPTION
The WV3DG72256V is a 2x128Mx72 synchronous DRAM
module which consists of eighteen 256Mx4 stack SDRAM
components (stacked from 128Mx4) in TSOP II package,
two 18 bit Drive ICs for input control signal and one 2Kb
EEPROM in an 8 pin TSSOP package for Serial Presence
Detect which are mounted on a 168 pin DIMM multilayer
FR4 Substrate.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN FRONT PIN BACK PIN FRONT PIN BACK PIN BACK PIN BACK
1 VSS 29 DQM1 57 DQ18 85 VSS 113 DQM5 141 DQ50
2 DQ0 30 CS0# 58 DQ19 86 DQ32 114 CS1# 142 DQ51
3 DQ1 31 NC 59 VCC 87 DQ33 115 RAS# 143 VCC
4 DQ2 32 VSS 60 DQ20 88 DQ34 116 VSS 144 DQ52
5 DQ3 33 A0 61 NC 89 DQ35 117 A1 145 NC
6 VCC 34 A2 62 *VREF 90 VCC 118 A3 146 *VREF
7 DQ4 35 A4 63 *CKE1 91 DQ36 119 A5 147 REGE
ww8 w.DaDtaQS5 heet346U.comA6 64 VSS 92 DQ37 120 A7 148 VSS
9 DQ6 37 A8 65 DQ21 93 DQ38 121 A9 149 DQ53
10 DQ7 38 A10/AP 66 DQ22 94 DQ39 122 BA0 150 DQ54
11 DQ8 39 BA1 67 DQ23 95 DQ40 123 A11 151 DQ55
12 VSS 40 VCC 68 VSS 96 VSS 124 VCC 152 VSS
13 DQ9 41 VCC 69 DQ24 97 DQ41 125 NC 153 DQ56
14 DQ10 42 CLK0 70 DQ25 98 DQ42 126 A12 154 DQ57
15 DQ11 43 VSS 71 DQ26 99 DQ43 127 VSS 155 DQ58
16 DQ12 44 NC 72 DQ27 100 DQ44 128 CKE0 156 DQ59
17 DQ13 45 CS2# 73 VCC 101 DQ45 129 CS3# 157 VCC
18 VCC 46 DQM2 74 DQ28 102 VCC 130 DQM6 158 DQ60
19 DQ14 47 DQM3 75 DQ29 103 DQ46 131 DQM7 159 DQ61
20 DQ15 48 NC 76 DQ30 104 DQ47 132 NC 160 DQ62
21 CB0 49 VCC 77 DQ31 105 CB4 133 VCC 161 DQ63
22 CB1 50 NC 78 VSS 106 CB5 134 NC 162 VSS
23 VSS 51 NC 79 NC 107 VSS 135 NC 163 NC
24 NC 52 CB2 80 NC 108 NC 136 CB6 164 NC
25 NC 53 CB3 81 WP 109 NC 137 CB7 165 SA0
26 VCC 54 VSS 82 SDA 110 VCC 138 VSS 166 SA1
27 WE# 55 DQ16 83 SCL 111 CAS# 139 DQ48 167 SA2
28 DQM0 56 DQ17 84 VCC 112 DQM4 140 DQ49 168 VCC
PIN NAMES
A0 – A12 Address Input (Multiplexed)
BA0-1
Select Bank
DQ0-63
Data Input/Output
CB0-7
Check Bit (Data-In/Data-Out)
CLK0
Clock Input
CKE0
Clock Enable Input
CS0# - CS3# Chip Select Input
RAS#
Row Address Strobe
CAS#
Column Address Strobe
WE# Write Enable
DQM0-7
DQM
VCC Power Supply (3.3V)
VSS Ground
VREF Power Supply for Reference
REGE
Register Enable
SDA Serial Data I/O
SCL Serial Clock
SA0-2
Address in EEPROM
NC No Connect
* Pins not used in this module.
January 2006
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 page




WV3DG72256V-AD2 pdf
White Electronic Designs
WV3DG72256V-AD2
PRELIMINARY*
Parameter
AC Input level (VIN/VIL)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
AC OPERATING TEST CONDITIONS
VCC = 3.3V, 0°C TA 70°C
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
Output
870
3.3V
1220
50pF
VOH (DC)=2.4V, IOH=-2mA
VOL (DC)=2.4V, IOL=-2mA
Output
Units
V
V
ns
V
Z0 = 50
VTT=1.4V
50
50pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
AC OPERATING TEST CONDITIONS
Parameter
Symbol
Value
133/100
Units
Notes
Row active to row active delay
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Row Precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
tRRD(MIN)
tRCD(MIN)
tRP(MIN)
tRAS(MIN)
tRAS(MAX)
tRC(MIN)
tRDL(MIN)
tDAL(MIN)
15
20
20
45
100
65
2
2 CLK + tRP
ns 1
ns 1
ns 1
ns 1
µs
ns 1
CLK 2
Last data in to new col. address delay
Last data in to burst stop
tCDL(MIN)
tBDL(MIN)
1 CLK 1
1 CLK 2
Col. address to col. address delay
Number of valid output data
tCCD(MIN)
CAS Latency = 3
Cas Latency = 2
1 CLK 2
2 CLK 3
1 ea 4
Notes: 1. The minimum number of clock cycles is determined by driving the minimum time required with clock cycle time and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
January 2006
Rev. 0
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

5 Page










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