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PDF 2KG034350JL Data sheet ( Hoja de datos )
| Número de pieza | 2KG034350JL | |
| Descripción | SWITCHING DIODE CHIPS | |
| Fabricantes | Silan Microelectronics | |
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2KG034350JL
2KG034350JL SWITCHING DIODE CHIPS
DESCRIPTION
Ø 2KG034350JL is a high speed switching diode chip fabricated
in planar technology.
Ø High reverse breakdown voltage rating.
Ø This chip can be encapsulated as MBD3004 switching diode.
Ø This chip has several thicknesses, can suit for different plastic
package. The top electrodes material is Al, and the back-side
electrodes material is Au.
Ø Chip size: 0.34 X 0.34 (mm2);
Ø Chip Thickness: 155±20µm or 180±20µm;
MAXIMUM RATINGS (Ta=25°C)
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
VR
IF
IFSM
TJ
TSTG
2KG034350JL CHIP TOPOGRAPHY
La: Chip Size: 340µm;
Lb: Pad Size: 180µm;
Value
350
300
225
4.0
150
-65~+150
Unit
V
V
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
www.DataSheet4U.com
Characteristics
Symbol
Test Conditions
IF=20mA.
Forward Voltage
VF IF=100mA.
IF=200mA.
Reverse Voltage
VBR IB=100µA.
Reverse Current
IR VR=240V.
Total Capacitance
Reverse Recovery Time
CT f=1MHz; VR=0.
Trr+
IF=IR=30mA, RL=100Ω;
measured at IR=3mA.
Min.
--
--
--
350
--
--
Typ.
--
--
--
--
--
--
Max.
0.87
1.0
1.25
--
100
5.0
Unit
V
V
V
V
nA
pF
-- -- 50 ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0 2008.01.29
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