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PDF TGF2022-06 Data sheet ( Hoja de datos )

Número de pieza TGF2022-06
Descripción DC - 20 GHz Discrete power pHEMT
Fabricantes TriQuint Semiconductor 
Logotipo TriQuint Semiconductor Logotipo



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No Preview Available ! TGF2022-06 Hoja de datos, Descripción, Manual

Advance Product Information
September 19, 2005
DC - 20 GHz Discrete power pHEMT
TGF2022-06
Product Description
The TriQuint TGF2022-06 is a discrete
0.6 mm pHEMT which operates from
DC-20 GHz. The TGF2022-06 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-06 typically provides
> 28 dBm of saturated output power with
www.DaptaoSwheeetr4Ug.acoinm of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-06 appropriate for
high efficiency applications.
The TGF2022-06 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-06 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Key Features and Performance
• Frequency Range: DC - 20 GHz
• > 28 dBm Nominal Psat
• 58% Maximum PAE
• 36 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 0.6mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 45-75mA
(Under RF Drive, Id rises from 45mA to 150mA)
• Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
20
15
10
5
0
0
MSG
MAG
2 4 6 8 10 12 14 16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com

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TGF2022-06 pdf
Advance Product Information
September 19, 2005
TGF2022-06
Measured Fixtured Data
Power tuned data at 10GHz
32
30
28
26
24
22
20
18
16
14
12
10
8
150
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
140
130
120
110
100
90
80
70
60
50
9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
8
62
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
58
54
50
46
42
38
34
30
26
22
18
14
10
9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
For power tuned devices at 10GHz
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 57.0 , Cp = 0.257pF, Γ = 0.400, θ = 104.7°
Vd=10V, Idq=75mA: Rp = 44.6 , Cp = 0.276pF, Γ = 0.382, θ = 120.1°
Efficiency tuned data at 10GHz
38 180
36 Vd = 12V, Id = 45mA
www.D3a4taSheet4UV.dco=m10V, Id = 45mA
32
30
28
26
24
22
20
18
16
14
170
160
150
140
130
120
110
100
90
80
70
12 60
10 50
8 9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
8
62
Vd = 12V, Id = 45mA
Vd = 10V, Id = 45mA
58
54
50
46
42
38
34
30
26
22
18
14
10
9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
For efficiency tuned devices at 10GHz:
Input matched for maximum gain & output load is:
Vd=12V, Idq=45mA: Rp = 74.2 , Cp = 0.255pF, Γ = 0.466, θ = 93.4°
Vd=10V, Idq=45mA: Rp = 72.5 , Cp = 0.252pF, Γ = 0.455, θ = 93.7°
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com

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