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PDF TGF2021-01 Data sheet ( Hoja de datos )
| Número de pieza | TGF2021-01 | |
| Descripción | DC-12 GHz Discrete Power pHEMT | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Advance Product Information
June 8, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-01
Product Description
Key Features and Performance
• Frequency Range: DC - 12 GHz
• > 30 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 1mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 75-125mA
(Under RF Drive, Id rises from 75mA to 240mA)
• Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2021-01 typically provides
> 30 dBm of saturated output power
www.DawtaiSthheept4oUw.ceomr gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
MSG
20
15 MAG
10
5
0
0 2 4 6 8 10 12 14 16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
1 page  
Advance Product Information
June 8, 2005
Linear Model for 1mm Unit pHEMT cell
TGF2021-01
Gate
Lg Rg
Cgs
Rgs
Ri
Rdg
Cdg
+
vi gm vi
-
Ls
Rd Ld
Rds Cds
Rp, Cp
Drain
VvÃC@HUÃpryy
Srsr
rprÃQyhr
Rs
Source
Source
Source
Gate
UPC
Source
Drain
L - via = 0.0135 nH (2x)
UPC = 1mm Unit pHEMT Cell
MODEL
Vd = 8V
Vd = 8V
Vd = 8V
Vd = 10V
Vd = 10V
Vd = 12V
PARAMETER Idq = 75mA Idq = 100mA Idq = 125mA Idq = 75mA Idq = 100mA Idq = 75mA
Rg
0.45
0.45
0.45
0.45 0.450 0.45
UNITS
Ω
Rs
0.14
0.14
0.14
0.17 0.160 0.19 Ω
Rd
0.41
0.43
0.46
0.41
0.450
0.410
Ω
gm
www.DataSheet4U.com
Cgs
Ri
0.310
2.39
1.22
0.318
2.58
1.19
0.314
2.70
1.20
0.296
2.61
1.24
0.303
2.74
1.23
0.286
2.72
1.27
S
pF
Ω
Cds
0.20
0.201
0.201
0.198
0.199
0.196
pF
Rds
149.1
152.3
158.8
171.8
173.7
187.9
Ω
Cgd
0.115
0.107
0.101
0.101
0.098
0.096
pF
Tau
6.29
6.63
6.99
7.19 7.410 7.79 pS
Ls
0.009
0.009
0.009
0.009
0.010
0.010
nH
Lg
0.089
0.089
0.089
0.089
0.089
0.089
nH
Ld
0.120
0.120
0.120
0.120
0.120
0.120
nH
Rgs
33000
33000
35100
28900
35700
24400
Ω
Rgd
349000
425000
405000
305000
366000
238000
Ω
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGF2021-01.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TGF2021-01 | DC-12 GHz Discrete Power pHEMT | TriQuint Semiconductor |
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT | TriQuint Semiconductor |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT | TriQuint Semiconductor |
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