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PDF FCP16N60N Data sheet ( Hoja de datos )
| Número de pieza | FCP16N60N | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCP16N60N / FCPF16N60NT
N-Channel SupreMOS® MOSFET
600 V, 16 A, 199 mΩ
November 2013
Features
• RDS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A
• Ultra Low Gate Charge (Typ. Qg = 40.2 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD/LED/PDP TV
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP16N60N FCPF16N60NT
600
±30
16.0
16.0*
10.1
10.1*
48.0 48.0*
355
5.3
1.34
100
20
134.4
35.7
1.08
0.29
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP16N60N
0.93
62.5
FCPF16N60NT
3.5
62.5
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve for FCP16N60N
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single pulse
0.01
0.005
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.93oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntganuglaurlaPruPlusleseDDuuraratitoionn[[sseecc]]
10-1
1
Figure 13. Transient Thermal Response Curve for FCPF16N60NT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
t1R,eRcetcatnagnguulalarrPPuullssee DDuraattiioonn[[sseecc] ]
10 102
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCP16N60N.PDF ] | |
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