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PDF FCP22N60N Data sheet ( Hoja de datos )
| Número de pieza | FCP22N60N | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCP22N60N / FCPF22N60NT
N-Channel MOSFET
600V, 22A, 0.165Ω
Features
• RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A
• BVDSS>650V @ TJ = 150oC
• Ultra Low Gate Charge ( Typ. Qg = 45nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
July 2009
SupreMOSTM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GDS
TO-220
FCP Series
GDS
TO-220F
FCPF series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25oC)
Continuous (TC = 100oC)
Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FCP22N60N FCPF22N60NT
600
±30
22 22*
13.8 13.8*
(Note 1)
66
66*
(Note 2)
672
7.3
2.75
(Note 3)
20
100
205 39
1.64 0.31
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθJS
Thermal Resistance, Case to Heat Sink (Typical)
RθJA
Thermal Resistance, Junction to Ambient
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FCP22N60N / FCPF22N60NT Rev. A2
1
FCP22N60N FCPF22N60NT
0.61 3.2
0.5 0.5
62.5 62.5
Units
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve - FCP22N60N
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
1
10
Figure 13. Transient Thermal Response Curve - FCPF22N60NT
5
1 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 3.2 oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3 10-2 10-1 100
Rectangular Pulse Duration [sec]
101
102
www.DataSheet4U.com
FCP22N60N / FCPF22N60NT Rev. A2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCP22N60N.PDF ] | |
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