DataSheet.es    


PDF LE25FW808 Data sheet ( Hoja de datos )

Número de pieza LE25FW808
Descripción 8M-bit (1024K X 8) Serial Flash Memory
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



Hay una vista previa y un enlace de descarga de LE25FW808 (archivo pdf) en la parte inferior de esta página.


Total 27 Páginas

No Preview Available ! LE25FW808 Hoja de datos, Descripción, Manual

Ordering number : ENA0839
CMOS IC
LE25FW808 8M-bit (1024K×8) Serial Flash Memory
with High-Density Read Mode
Overview
The LE25FW808 is 1024K×8bit Serial flash memory by 3.0V single power supply operation, and support serial
peripheral interface (S.P.I.). There are three kinds of erase functions, Small Sector (8K bytes) erase, Sector (64K bytes)
erase and Chip erase. If those erase is used properly according to the application, you can efficiently use the memory space.
Page program can program the arbitrary data from 1 byte to 256 bytes. LE25FW808 has our original high-speed program
function, page program time is 0.3ms (Typ.). Therefore, the overall rewriting time of 8M bit is 1.5s (Typ.), when
combining with Chip erase. Moreover, LE25FW808 is stored in 8 pin very small package by making the best use of the
feature of serial interface. According to these features, LE25FW808 is the best suited for applications in the portable
electronic devices, that require re-programmable nonvolatile storage of program memory.
LE25FW808 has also the High-Density read mode (hereafter, HD_READ mode) that is the most high-speed data transfer
in the world as the flash memory with serial interface. About eight times the data-transfer velocity can be achieved without
changing the clock frequency used in a usual serial flash memory by using this mode. For instance, it is possible to read
with 240Mbit/s in the maximum by using the HD_READ mode of 30MHz though a standard serial flash memory read with
30Mbit/s or less.
Features
Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range
Operating frequency : 50MHz
Temperature range : 0 to 70°C
–40 to +85°C (Planning)
Continued on next page.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
www.DataSheet4U.coemquipment.
61009 SY IM 20090319-S00003 No.A0839-1/27

1 page




LE25FW808 pdf
LE25FW808
Device Operation
The LE25FW808 features electrical on-chip erase functions using a single 3.0V power supply, that have been added to
the EPROM functions of the industry standard that support serial interfaces. Interfacing and control are facilitated by
incorporating the command registers inside the chip. The read, erase, program and other required functions of the
device are executed through the command registers. The command addresses and data input in accordance with "Table
2 Command Settings" are latched inside the device in order to execute the required operations. "Figure 3 Serial Input
Timing" shows the timing waveforms of the serial data input. First, at the falling CS edge the device is selected, and
serial input is enabled for the commands, addresses, etc. These inputs are introduced internally in sequence starting with
bit 7 in synchronization with the rising SCK edge. At this time, output pin SO is in the high-impedance state. The
output pin is placed in the low-impedance state when the data is output in sequence starting with bit 7 synchronized to
the falling clock edge during read, status register read and silicon ID. Refer to "Figure 4 Serial Output Timing" for the
serial output timing.
The LE25FW808 supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is
automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of
SCK is high.
Figure 3 Serial Input Timing
CS
SCK
SI
tCLS
tCSS
tDS tDH
DATA VALID
tCPH
tCLHI tCLLO tCSH
tCLH
High Impedance
SO
High Impedance
Figure 4 Serial Output Timing
CS
SCK
SO
SI
tCLZ
tHO
DATA VALID
tV
www.DataSheet4U.com
tCHZ
No.A0839-5/27

5 Page





LE25FW808 arduino
LE25FW808
Wrap around reading
When the burst length is set, the wrap around reading method is set by specifying (1, X, X) the register bit.
The wrap around reading method automatically continues to read as long as the SCK is input. Reading is begun
from the input address, and an internal address is automatically count up by two addresses (every 16 bits). If the
internal address reaches to the delimitation of the address set beforehand, it returns to the head of the delimitation of
the address and reading is repeated.
The delimitation of the address can be set to four kinds (every 4 words, 8 words, 16 words and 32 words (one word
=16 bits)) by two subordinate position bits of the register bit.
For instance, 16 words becomes a unit of the address delimitation for reading by 16 word wrap around. After it
reaches the final word of the address delimitation by 16 words, it returns to the first word and reading is done even if
reading is started from which address.
The order of reading for 20 words when the address of the third word from the head is read as a start address is as
follows.
The order
of reading
address
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 0000 0001 0010
The order
of reading
address
17 18 19 20
0011 0100 0101 0110
Mark address is A4 to A1
Clock frequency setting
In this model, it is necessary to set the register bit of the clock frequency according to the operation frequency
used .The clock of 50MHz or less can be input at present. Especially, the power saving mode that decreases the power
consumption at HD_READ can be selected by specifying (0, 0) the register bit. However, this power saving mode use
with operation frequency 16MHz or less. Moreover, spec (tV2) of the output data time from SCK changes in this case.
Clock latency setting
In this model, CL (= clock latency: number of clocks from the setting of the address to the output of the first data) can
be set by setting the clock latency register bit. Please refer to Figure 7 for the method of counting CL. The falling edge
of the first SCK after the address input is assumed to be CL=0, and 0.5 CL is added every half clock of SCK. CL can
be set within the range from 0.5 to 3.0. However, when the clock frequency exceeds 30MHz, it is necessary to set CL
to 1.0 or more.
www.DataSheet4U.com
No.A0839-11/27

11 Page







PáginasTotal 27 Páginas
PDF Descargar[ Datasheet LE25FW808.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
LE25FW806CMOS IC 8M-bit (1M X 8) Serial Flash MemorySanyo Semicon Device
Sanyo Semicon Device
LE25FW8088M-bit (1024K X 8) Serial Flash MemorySanyo Semicon Device
Sanyo Semicon Device

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar