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PDF IRG4RC20F Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC20F | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91731A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC20F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low VCE(on) with low switching
losses
C
G
E
N-channel
VCES = 600V
VCE(on) typ. = 1.82V
@VGE = 15V, IC = 12A
Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
D-Pak
TO-252AA
Max.
600
22
12
44
44
± 20
5.0
66
26
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
0.3 (0.01)
Max.
1.9
50
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.DataSheet4U.com
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
2/22/01
1 page  
1000
800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600 Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC20F
20 VCC = 400V
I C = 12A
15
10
5
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.72 VCC = 480V
VGE = 15V
TJ = 25 ° C
0.71 IC = 9.0A
0.70
0.68
0.67
0.66
0
10 20 30 40
RG , Gate Resistance (O( hΩm))
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
www.DataSheet4U.com
10 RG = 500OΩhm
VGE = 15V
VCC = 480V
1
IC = 24A
IC = 12A
IC = 6A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC20F.PDF ] | |
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