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PDF IRG4RC10U Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC10U | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91572A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10U
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
8.5
5.0
34
34
±20
110
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
Max.
3.3
50
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
www.DataSheet4U.com
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
8/30/99
1 page  
500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
300 Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC10U
20
VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.30
VCC = 480V
VGE = 15V
TJ = 25 ° C
0.26 IC = 5.0A
0.22
0.18
0.14
0.10
50
60 70 80 90
RGRG,,GGaattee RResistaannccee ((OΩhm) )
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
www.DataSheet4U.com
10 RG = 110000OΩhm
VGE = 15V
VCC = 480V
1
0.1
IC = 10 A
IC = 5.50 AA
IC = 2.5 A
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC10U.PDF ] | |
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