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PDF IRG4RC10S Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC10S | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 91732A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10S
Standard Speed IGBT
Features
• Extremely low voltage drop; 1.0V typical at 2A, 100°C
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D-PAK
TO-252AA
Max.
600
14
8.0
18
18
± 20
110
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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www.DataSheet4U.com
Max.
3.3
50
–––
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
8/30/99
1 page  
500 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
Cies
300
Coes
200
100 Cres
0
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC10S
20
VCC = 400V
I C = 8A
15
10
5
0
0 5 10 15 20
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.8 VCC = 480V
VGE = 15V
TJ = 25 °C
IC = 8.0A
2.7
100 RG = O10h0mΩ
VGE = 15V
VCC = 480V
10
1
IC = 16A
IC = 8A
IC = 4A
2.6
0
20 40 60 80 100
RRGG ,, GGaatteeRReessisistatannccee(O( Ωhm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC10S.PDF ] | |
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