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PDF IRG4RC10KPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC10KPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTO | |
| Fabricantes | International Rectifier | |
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PD 95389
IRG4RC10KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-252AA package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
D-PAK
TO-252AA
Max.
600
9.0
5.0
18
18
10
± 20
34
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
0.3 (0.01)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
www.DataSheet4U.com
Max.
3.3
50
–––
Units
°C/W
g (oz)
1
06/10/04
1 page  
400 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
300
Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC10KPbF
20 VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.28 VCC = 480V
VGE = 15V
TJ = 25 °C
IC = 5A
0.26
0.24
0.22
0.20
0
20 40 60 80
RG , Gate Resistance ( Ω )
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
www.DataSheet4U.com
10 RG = O10h0mΩ
VGE = 15V
VCC = 480V
1 IC = 10A
IC = 5A
IC = 2.5A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC10KPBF.PDF ] | |
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