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PDF IRG4RC10KDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC10KDPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTO | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95035
IRG4RC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Short Circuit Rated
UltraFast IGBT
Features
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-252AA package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
• Lead-Free
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• For hints see design tip 97003
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
µs
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
2/20/04
1 page  
400
VCCGireesEs
=
=
=
0V,
CCggec
+
f = 1MHz
Cgc , Cce
SHORTED
Coes = Cce + Cgc
300
Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.40 VCC = 480V
VGE
TJ
=
=
15V
25 °C
0.38 IC = 5.0A
0.36
0.34
0.32
0.30
0
20 40 60
RG , Gate Resistance
80
(Ω)
100
IRG4RC10KDPbF
20 VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG = O5h0mΩ
VGE = 15V
VCC = 480V
IC = 10A
1
IC = 5A
IC = 2.5A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page 
IRG4RC10KDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
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11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC10KDPBF.PDF ] | |
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