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PDF 2SC3736 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3736 | |
| Descripción | NPN Silicon Epitaxia | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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SMD Type
NPN Silicon Epitaxia
2SC3736
Features
High speed,high voltage switching.
Low collector saturation voltage.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)*
Total power dissipation
Junction temperature
Storage temperature
* PW 10ms,duty cycle 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Rating
80
45
5
1
2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 45V, IE=0
IEBO VEB = 4V, IC=0
hFE VCE = 10V , IC = 50mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
fT VCE = 10V , IE = -100mA
Cob VCB = 10V , IE = 0, f = 1.0MHz
ton
tstg IC = 500mA , IB1 = IB2 = 50mA
toff
Min Typ Max Unit
0.5 nA
0.5 nA
60 200
0.17 0.4 V
0.9 1.2 V
300 380
MHz
6.7 10 pF
20 40 ns
55 80 ns
72 100 ns
hFE Classification
Marking
hFE
OL
60 120
OK
100 200
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC3736.PDF ] | |
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