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PDF LFB01L Data sheet ( Hoja de datos )

Número de pieza LFB01L
Descripción Ultrahigh-Speed Switching Diode
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! LFB01L Hoja de datos, Descripción, Manual

Ordering number:EN1885C
LFB01, 01L
Silicon Planar Leadless Type
Ultrahigh-Speed Switching Diode
Features
· Highly reliable leadless glass sleeve structure.
· Very small size.
· Capable of being suface-mounted.
· Forward voltage : VF max=1.2V.
· Interterminal capacitance : C max=3pF.
· Reverse recovery time : trr max=4ns.
Package Dimensions
unit:mm
1137
[LFB01, 01L]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Curent
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VF
IR1
IR2
C
trr
Reverse Recovery Time (trr) Test Circuit
IF=100mA
VR=30V
At each VR
VR=0V, f=1MHz
VR=6V, IF=10mA, RL=50
C:Cathode
A:Anode
LFB01L
LFB01
55 90
50 80
480
150
2
300
+175
–65 to+ 175
Unit
V
V
mA
mA
A
mW
˚C
˚C
Ratings
min typ max
Unit
1.2 V
0.1 µA
0.5 µA
3 pF
4 ns
Unit (resistance :, capacitance :F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/2239MO/D288MO/D025KI, TS No.1885-1/2

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