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PDF FDZ294N Data sheet ( Hoja de datos )
| Número de pieza | FDZ294N | |
| Descripción | N-Channel 2.5 V Specified PowerTrench BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
July 2005
FDZ294N
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ294N minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Battery protection
Features
• 6 A, 20 V
RDS(ON) = 23 mΩ @ VGS = 4.5 V
RDS(ON) = 34 mΩ @ VGS = 2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.
GATE
D
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
E
FDZ294N
7”
©2005 Fairchild Semiconductor Corporation
G
Ratings
20
±12
6
10
1.7
–55 to +150
72
Tape width
8mm
S
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDZ294N Rev. B3 (W)
1 page  
www.DataSheet4DU.icmomensional Outline and Pad Layout
FDZ294N Rev. B3 (W)
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDZ294N.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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