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PDF FDS4885C Data sheet ( Hoja de datos )

Número de pieza FDS4885C
Descripción Dual N & P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDS4885C Hoja de datos, Descripción, Manual

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January 2005
FDS4885C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Synchronous rectifier
Backlight inverter stage
Features
Q1: N-Channel
7.5A, 40V RDS(on) = 22m@ VGS = 10V
RDS(on) = 35m@ VGS = 7V
Q2: P-Channel
–6A, –40V RDS(on) = 31m@ VGS = –10V
RDS(on) = 42m@ VGS = –4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S1 S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4885C
FDS4885C
13”
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
40 40
±20 ±20
7.5 –6
20 –20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78 °C/W
40
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4885C Rev D(W)

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FDS4885C pdf
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Typical Characteristics: Q1 (N-Channel)
14
ID = 7.5A
12
10
8
6
4
2
0
04
VDS = 10V
20V
30V
8 12 16 20 24
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
0.1 VGS = 10.0V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
f = 1 MHz
Ciss VGS = 0 V
800
600
400 Coss
200
Crss
0
0
5
10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
35
40
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
FDS4885C Rev D(W)

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